Arsenic Irradiation Induced Atomic Interdiffusion of In_xGa_1-xAs/InP Quantum Well Structures

Suppression of thermal atomic interdiffusion in C-doped InGaAs/AlGaAs quantum well laser structures using TiO2 dielectric layers

Defect Induced Diffusion Mechanisms in Ion Implanted Quantum Well Structures

The present paper describes a method for utilizing X-ray diiraction measurements to determine the diiusion constant D associated with a speciic diffusion mechanism. In particular, for Cd 1?x Mn x Te quantum well structures a value of D 0:5 A 2 s ?1 was obtained for a vacancy controlled diiusion process.

circuit modeling of quantum well heterostructure biopolar phototransistor مدل سازی مداری qw-hbpt

چکیده ندارد.

Observation of Boron and Arsenic Mediated Interdiffusion across GermaniumÕSilicon Interfaces

The codiffusion of Ge with dopant atoms ~boron or arsenic! into Si substrates is analyzed using secondary ion mass spectroscopy. While earlier studies have focused on the diffusion of dopants across deposited Si12xGex films or on diffusion phenomena at in situ doped Si12xGex /Si interfaces, this paper reports on the codiffusion of Ge and implanted dopant atoms into Si substrates resulting in th...

Quantum well intermixing in GaInNAs/GaAs structures